Methods and apparatus of metal gate transistors

摘要

In some embodiments, a method of manufacturing a device includes providing a first device with an isolation area, an active area next to the isolation area, a metal gate above the isolation area and the active area, and a dielectric layer above the metal gate. The method also includes forming a first opening within a conductive layer of the metal gate, and a second opening within the dielectric layer. The first opening and the second opening are connected, and are of a first shape. The method further includes expanding the first opening to form a third opening of a second shape within the conductive layer of the metal gate and beneath the dielectric layer, forming a first contact part by filling the third opening, and forming a second contact part by filling the second opening, the first contact part being connected to the second contact part.

主权项

1. A method of manufacturing a device comprising:
providing a first device with an isolation area, an active area next to the isolation area, a metal gate above the isolation area and the active area, and a dielectric layer above the metal gate; forming a first opening within a conductive layer of the metal gate, and a second opening within the dielectric layer, wherein the first opening and the second opening are connected, and are of a first shape; expanding the first opening within the conductive layer of the metal gate to form a third opening, wherein the third opening is of a second shape and beneath the dielectric layer; and forming a first contact part by filling the third opening within the conductive layer, and forming a second contact part by filling the second opening, wherein the first contact part is connected to the second contact part.