ALUMINIUM NITRIDE SUBSTRATE AND METHOD FOR PRODUCING SAME

摘要

In the field of insulating substrates useful for semiconductor devices, a laser-subdivided aluminium nitride substrate has a re-solidified layer formed at the laser score lines comprising oxide, nitride and/or oxynitride of (i) aluminium and/or of (ii) metal additive(s) of said aluminium nitride substrate. In a method of modifying an aluminium nitride substrate the substrate is laser-scored, a heat treatment step is carried out at about 1000 DEG C to 1800 DEG C, and the substrate is then metallised. The modified aluminium nitride substrate can exhibit desired withstand-voltage characteristics.