Reverse complement magnetic tunnel junction (MTJ) bit cells employing shared source lines, and related methods

摘要

Reverse complement MTJ bit cells employing shared source lines are disclosed. In one aspect, a 2T2MTJ reverse complement bit cell employing shared source line is provided. Bit cell includes first MTJ and second MTJ. Value of first MTJ is complement of value of second MTJ. First bit line is coupled to top layer of first MTJ, and first electrode of first access transistor is coupled to bottom layer of first MTJ. Second bit line is coupled to bottom layer of second MTJ, and first electrode of second access transistor is coupled to top layer of second MTJ. Word line is coupled to second electrode of first access transistor and second access transistor. Shared source line is coupled to third electrode of first access transistor and second access transistor. Employing shared source line allows the bit cell to be designed with reduced parasitic resistance.

主权项

1. A reverse complement magnetic tunnel junction (MTJ) bit cell, comprising:
a first MTJ; a second MTJ; a first electrode of a first access transistor coupled to a bottom layer of the first MTJ; a first electrode of a second access transistor coupled to a top layer of the second MTJ; a word line coupled to a second electrode of the first access transistor and a second electrode of the second access transistor; a first bit line coupled to a top layer of the first MTJ; a second bit line coupled to a bottom layer of the second MTJ; and a shared source line coupled to a third electrode of the first access transistor and a third electrode of the second access transistor.