Method for patterning semiconductor

摘要

A method for forming a fine pattern of a semiconductor element by using intermediate transcription layers. A layer to be transcribed is formed on a silicon substrate. A first intermediate transcription layer with a thickness of delta and a first mask layer are formed on the layer to be transcribed and are patterned to produce a line width of L and a line space of S, with S approximately equal L +2 delta . A second intermediate transcription layer of the same material as the first intermediate transcription layer and with a thickness of delta is formed on the overall surface. A second mask layer with a substantially flattened surface is formed on the second intermediate transcription layer. The flattened second mask layer is etched back so as to expose a portion of the second intermediate transcription layer. A pattern is formed with the first and second intermediate transcription layers by partial isotropic etching of the intermediate transcription layers to produce a line width and line space of the intermediate transcription layers of approximately L/2 and S/2, respectively. The mask layers are removed, and an anisotropic dry etching of the layer to be transcribed is performed using the intermediate layers as a mask. The patterning is completed by removing the intermediate transcription layers.