| 摘要 |
A memory including a semiconductor substrate (4), an array of memory cells (2) mutually electrically insulated by side insulators (5), wherein each memory cell includes a gate stack (19) consisting of a gate insulator (6), a floating gate (8) and a control gate (10) separated by an electrical insulator (12) between the gates, said gate insulator being arranged between the floating gate and the substrate, a source (16) and a drain (14) formed in the substrate on either side of said stack and outside the side insulators, an erasing gate (22) located above the source (16) in partial overlap with the stack, and electrically insulated from the source and said stack by a thin insulator (18), as well as conductive strips for applying electrical signals to the gate stacks, erasing gates, sources and drains.
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