| 摘要 |
A method of analyzing metal impurities in a surface oxide film of a semiconductor substrate enables a detection sensitivity of the order of 1011 atoms/cm2 in a simple technique. This method comprises measuring a quantity of oxide charge resulting from specified metal impurities existing in the surface oxide film formed on the surface of a semiconductor substrate, and using a predetermined correlation between the quantity of metal impurities and the quantity of oxide charge to determine the quantity of metal impurities in the surface oxide film from the measured quantity of oxide charge of the surface oxide film. Further, it is possible to determine the distribution of concentration of the metal impurities in a thermal oxide film on a silicon substrate by determining a correlation between a depth of the thermal oxide film and a quantity of oxide charge resulting from the metal impurities in the thermal oxide film and by using the correlation between the quantity of the metal impurities in the thermal oxide film and the measured quantity of oxide charge resulting therefrom.
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