METHOD OF FABRICATING A MEMORY CELL HAVING SHALLOW JUNCTION

摘要

The method includes the steps of; low concentration source/drain ion injecting into a substrate to form a low concentration source/drain connection, forming insulating layer, polysilicone layer, burying contact between gate and field oxide layer, forming storage node polysilicone layer and heat treating and forming capacitor dielectric layer and plate polysilicone layer, thereby reducing connection depth and connection leakage.