| 摘要 |
The channel resistance of a MOSFET is made independent of VS-VD by maintaining the ends of the gate electrode (24) adjacent the source (20) and drain (22) regions at an offset voltage with respect to the source and drain regions, respectively, and by maintaining the portions of the body regions adjacent to the source and drain regions at another offset voltage with respect to the source and drain regions, respectively. In this manner, VS-VD appears across the channel, across the gate, and across the body region beneath the channel. The resulting linear voltage drops along each of the three causes the channel-to-gate and channel-to-body potentials to be constant along the entire length of the channel, thereby avoiding variations in the number of carriers, mobility variations and body effect in the channel. |
