发明名称 Plasma CVD of carbonaceous films on substrate having reduced metal on its surface
摘要 A plasma CVD method for forming a carbonaceous material containing diamond or microcrystalline grains therein is disclosed, which comprises placing a substrate in a reaction chamber said substrate provided with reduced Ni, Ge, or Mn on its surface; inputting a carbon compound gas into said reaction chamber; supplying an electric energy to said gas to convert said gas to a plasma; and forming said cabonaceous material on said substrate, wherein said reduced Ni, Ge, or Mn act as seeds on said surface of said substrate to promote formation of said carbonaceous material.
申请公布号 US5330802(A) 申请公布日期 1994.07.19
申请号 US19920896914 申请日期 1992.06.11
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUMPEI
分类号 C01B31/04;C01B31/02;C23C16/26;C23C16/27;C23C16/50;C23C16/511;C30B29/04;(IPC1-7):B05D3/06 主分类号 C01B31/04
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