| 发明名称 |
Electron beam lithography system and method |
| 摘要 |
An electron beam lithography system and method which provide an in-plane current density distribution of an electron beam focussed onto a specimen so as to prevent a proximity effect and space charge effect.
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| 申请公布号 |
US5334282(A) |
申请公布日期 |
1994.08.02 |
| 申请号 |
US19910765252 |
申请日期 |
1991.09.25 |
| 申请人 |
HITACHI, LTD. |
发明人 |
NAKAYAMA, YOSHINORI;OKAZAKI, SHINJI |
| 分类号 |
H01L21/027;B23K15/00;G03F7/20;H01J37/317;(IPC1-7):A61K27/02 |
主分类号 |
H01L21/027 |
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