| 摘要 |
<p>A method for heteroepitaxial growth and the device wherein a single crystal ceramic substrate 20, preferably Y stabilized zirconia, MgAl2O4, Al2O3, 3C-SiC, 6H-SiC or MgO is cut and polished at from about 1.0 to about 10 degrees off axis to produce a substantially flat surface. The atoms on the surface are redistributed on the surface to produce surface steps 22 of at least three lattice spacings. An optional epitaxially grown ceramic buffer layer, preferably AlN or GaN, is then formed on the substrate. Then a layer of semiconductor 24, preferably SiC, AlN when the buffer layer is used and is not AlN or GaN is grown over the substrate and buffer layer, if used. <IMAGE></p> |
