发明名称 |
Semiconductor rectifier having high breakdown voltage and high speed operation |
摘要 |
A semiconductor rectifier having a high breakdown voltage and a high speed operation is provided, which comprises a semiconductor substrate including a first semiconductor layer of one conductivity type and a second semiconductor layer of one conductivity type provided on the first semiconductor layer, a third semiconductor layer of an opposite conductivity type having a depth D and formed in the second semiconductor layer to provide a pn junction therebetween, the third semiconductor layer defining a plurality of exposed regions of the second semiconductor layer, each of the plurality of exposed regions of the second semiconductor layer having a width W, a relation between the depth D and the width W being given by D>/=0.5W, and a metal electrode provided on the substrate surface.
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申请公布号 |
US5345100(A) |
申请公布日期 |
1994.09.06 |
申请号 |
US19930119561 |
申请日期 |
1993.09.13 |
申请人 |
SHINDENGEN ELECTRIC MANUFACTURING CO., LTD. |
发明人 |
KAN, TAKASHI;WAKATABE, MASARU;TANAKA, MITSUGU;KUNORI, SHINJI;SUGIYAMA, AKIRA |
分类号 |
H01L29/861;(IPC1-7):H01L29/78;H01L23/00 |
主分类号 |
H01L29/861 |
代理机构 |
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