SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The semiconductor memory device includes word lines respectively formed on the upper and lower portion of each of memory cells, the word lines being connected to each other in a predetermined portion of a cell array, first power lines placed on the center of each of the memory cells and connected to memory cells neighboring thereto in parallel direction, second power lines formed in horizontal with the first power lines, and bit lines respectively formed on the left and right of each of memory cells, thereby increasing process margin for forming an active region of the semiconductor memory device.