CAPACITOR AND MANUFACTURING METHOD THEREOF

摘要

forming a first conductive layer on a substrate, forming an oxidation stop layer on the first conductive layer, forming a polysilicon layer on the oxidation stop layer; heat-treating the polysilicon layer to form uneven portions on its surface, oxidizing the polysilicon layer to form a silicon oxide layer, etching the oxidation stop layer and silicon oxide layer to selectively expose the first conductive layer; etching the first conductive layer by a predetermined thickness using the oxidation stop layer and silicon oxide layer as a mask' removing the oxidation stop layer and silicon oxide layer; forming a dielectric layer on the surface of the first conductive layer; and forming a second conductive layer thereon.