发明名称 |
Method for manufacturing semiconductor integrated circuit device |
摘要 |
A semiconductor integrated circuit according to the present invention comprises a semiconductor substrate, a plurality of MOS field effect transistors each formed on a surface region of the semiconductor substrate and having source and drain regions, a gate insulating film formed on a region between the source and drain regions, and a gate electrode formed on the gate insulating film. The gate electrode includes a polycrystalline SiGe-mixed crystal which is expressed by Si1-xGex (1>x>0).
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申请公布号 |
US5356821(A) |
申请公布日期 |
1994.10.18 |
申请号 |
US19930104907 |
申请日期 |
1993.08.12 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NARUSE, HIROSHI;TAKA, SHIN-ICHI |
分类号 |
H01L27/092;H01L21/8238;H01L21/8248;H01L21/8249;H01L27/06;H01L29/49;H01L29/737;(IPC1-7):H01L21/265 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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