TUNGSTEN FILM DEPOSITING METHOD USING PECVD

摘要

The vapor deposition method can obtain the thin Tungsten film of a low resistivity by regulating the partial pressure of a reaction gas within a predefined range while eliminating a process of abrupt heat treatment. In the vapor deposition method, the partial pressure ratio of the reaction gases (H2:WF6) is managed over 15:1, the vapor deposition pressure range 0.1 - 1 Torr, the deposition temperature range 250 - 500 degree.