A blue-green II/VI semiconductor injection laser utilizing a Zn1-uCduSe active layer (quantum well) having Zn1-xMgxSySe1-y cladding layers and ZnSzSe1-z guiding layers on a GaAs substrate. These devices are operable in a pulse mode at room temperature.
申请公布号
US5363395(A)
申请公布日期
1994.11.08
申请号
US19930159755
申请日期
1993.11.30
申请人
NORTH AMERICAN PHILIPS CORPORATION
发明人
GAINES, JAMES M.;DRENTEN, RONALD R.;HABERERN, KEVIN W.;MARSHALL, THOMAS M.;MENSZ, PIOTR M.;PETRUZZELLO, JOHN
