| 发明名称 |
Method for sulfide surface passivation |
| 摘要 |
A purely chemical method for forming a layer of insoluble sulfides on semiconductor surfaces in order to passivate their surfaces and more particularly to a method of forming a layer of insoluble sulfides on a HgCdTe device surface.
|
| 申请公布号 |
US5366934(A) |
申请公布日期 |
1994.11.22 |
| 申请号 |
US19890310034 |
申请日期 |
1989.02.10 |
| 申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
LA CHAPELLE, JR., THEODORE J. |
| 分类号 |
H01L21/465;H01L21/471;(IPC1-7):H01L21/00;H01L21/02 |
主分类号 |
H01L21/465 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
