Method of fabricating a BiCMOS structure

摘要

A method of fabricating a bipolar transistor on a semiconductor wafer is provided. The method includes steps of implanting p-type dopants into diffusion compensation regions (23) where an intrinsic base region (18) intersects an isolation oxide (31). The implant step is carried out before depositing a poly layer (from which an emitter contact (27a) is formed). Thus, the diffusion compensation region (23) is also located below the emitter contact (27a). A diffused emitter (27b) is subsequent formed by diffusing dopant from the emitter contact (27a) into the underlying active area.