发明名称 |
Ion implantation apparatus |
摘要 |
An ion implantation apparatus having a plasma source for generating ions, an ion accelerator for accelerating the generated ions, and a substrate holder provided on a position which the accelerated ions irradiate, wherein a current density of a desired kind of ions is measured by an electromagnetic ion energy analyzer having an electric field and a magnetic field, thereby controlling a dose of the ions.
|
申请公布号 |
US5393986(A) |
申请公布日期 |
1995.02.28 |
申请号 |
US19920942663 |
申请日期 |
1992.09.09 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YOSHINOUCHI, ATSUSHI;MORITA, TATSUO;TSUCHIMOTO, SHUHEI |
分类号 |
C23C14/48;C23C14/54;H01J37/05;H01J37/244;H01J37/317;H01L21/265;(IPC1-7):H01J37/317 |
主分类号 |
C23C14/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|