SEMICONDUCTOR DEVICE HAVING DOUBLE SILICIDE STRUCTURE AND FABRICATING METHOD THEREOF

摘要

The method includes the steps of forming an oxide film (8) on a single crystalline silicon substrate (7), growing a poly-Si layer (9) on the film (8) under 250m Torr atmosphere at 625 deg.C and by LPCVD, depositing a first metal silicide layer (12) of 100-200 angstrom thickness on the poly-si layer (9) at a first temp., and depositing a second metal silicide layer (13) of 400-680 angstrom on the layer (9) at a second temperature less than the first temperature, thereby forming a double layered silicide structure to improve the instability of high temperature in the succeeding heat-treating process.