| 摘要 |
The memory module improves the characteristic of memory device by supporting stable voltage without noise and interference. The single in line memory module(10) consists of seven boards. The seven board comprises of the first, the second, the third, the fourth signal line layers(1) (3) (5) (7), the first earth line layer(2) inserted between the first and the second signal line layer, the second earth line layer(4) inserted between the second and the third signal line layer, a VCC line layer(6) inserted between the third and the fourth signal line layer. A schmidt trigger-type input buffer device(9) is inserted between memory regions(8).
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