| 摘要 |
<p>A semiconductor device thin film formation method in which multiple ac power sources (8, 10) of differing frequencies or a power source of a single frequency is used to generate a plasma in a reactor vessel (2); by activating a reaction gas introduced to this reaction vessel (2) using plasma discharge energy, a deposit is formed by chemical growth of the reaction gas and deposited on a sample surface (5); a mixed gas of TEOS gas with a SiXnR4-n (where 1 </= n </= 3, Si is silicon, X is a halogen substituent, and R is an alkoxy group) silicon halide hydrocarbon gas is used as the reaction gas. This semiconductor device thin film forming method uses the PECVD method and is capable of greater densities. <IMAGE></p> |
