BONDED SOI WAFER MANUFACTURING METHOD

摘要

The present invention is a bonded SOI wafer manufacturing method that has: a step for depositing a polycrystalline silicon layer on a base wafer; a step for forming an insulating film on a bond wafer; a step for bonding the polished surface of the polycrystalline silicon layer and the bond wafer with the insulating film therebetween; and a step for thinning the bond wafer. As the base wafer, a silicon single crystal wafer having 100 Ω∙cm or higher is used, the step for depositing the polycrystalline silicon layer also includes a step for previously forming an oxide film having a thickness of 10-30 nm on the base wafer surface on which the polycrystalline silicon layer is to be deposited, and the polycrystalline silicon layer is deposited at a temperature of 1,050-1,200°C. Consequently, provided is the SOI wafer manufacturing method, whereby the polycrystalline silicon layer can be deposited by suppressing single crystallization even being subjected to a heat treatment step in the SOI wafer manufacturing steps, and a heat treatment step in device manufacturing steps, and the throughput of the polycrystalline silicon layer deposition step can be improved.