EUV radiation system and lithographic apparatus

摘要

A lithographic projection apparatus is provided with a EUV radiation system that includes a source chamber, a supply constructed and arranged to supply a target material to a predetermined plasma formation position, an optical system formed by three or more mirrors arranged to establish a beam path extending to the target material when the target material is located at the predetermined plasma formation position, and a laser system constructed and arranged to provide a laser beam along the beam path for interaction with the target material to produce an EUV radiation-emitting plasma inside the chamber.

主权项

1. An EUV radiation system comprising:
a source chamber; a supply constructed and arranged to supply a target material to a predetermined plasma formation position; an optical system formed by three or more mirrors arranged to establish a beam path extending to the target material when the target material is located at the predetermined plasma formation position, wherein three of said mirrors form a three-mirror anastigmat constructed and arranged to at least reduce an amount of astigmatism in a focal point of the optical system, and wherein reflective surfaces of the three of said mirrors are off-axis sections of rotationally symmetric conic surfaces; and a laser system constructed and arranged to provide a laser beam along the beam path such that the laser beam is focused by a final one of the mirrors at the predetermined plasma formation position for interaction with the target material to produce an EUV radiation-emitting plasma inside the chamber.