| 摘要 |
<p>A storage device comprises, on a substrate, a first semiconductor region of one conductivity type, second and third semiconductor regions of a conductivity type opposite to the one conductivity type contiguous to the first semiconductor region, a first electrode which is formed on a region for isolating the second and third semiconductor regions via an insulating layer, and a second electrode formed on the first electrode via an insulating layer, a resistance between the first and second electrodes is changed from a high-resistance state to a low-resistance state. <IMAGE></p> |
