Anisotropic plasma etching of semiconductor device.

摘要

Removing resist from a semiconductor wafer having a substrate includes: (a) depositing a metal layer over the substrate; (b) coating the substrate with a polymeric layer; (c) applying an inorganic layer over the polymeric layer; (d) applying a resist layer over the inorganic layer; (e) patterning the resist layer; (f) etching the inorganic layer; and (g) ashing the resist with an anisotropic oxygen plasma. Also claimed is a system for removing resist comprising: (a') a reactor; (b') a wafer with a polymeric layer, within the reactor; (c') an oxygen plasma source inside the reactor; (d') a wafer biasing appts. to anisotropically direct ions from plasma towards wafer, which can be biased to ground; and (e') a sensor to detect when resist has been removed.