A GENERAL PURPOSE, NON-VOLATILE REPROGRAMMABLE SWITCH

摘要

A programmable interconnect which closely integrates an independent switching transistor (40) with separate NVM programming and erasing elements. The programming element is an EPROM transistor (32), and the erasing element is a Fowler-Nordheim tunneling device (31). A unitary floating gate (28) is shared by the switching transistor, the NVM programming elements and the erasing elements. The shared floating gate structure (28) is the memory structure of the integrated programmable interconnect and controls the impedance of the switching transistor (40).