发明名称 Monolithic microwave integrated circuit apparatus
摘要 A monolithic microwave semiconductor integrated circuit including a bias stabilizing circuit of a current mirror type formed of a bias control transistor formed of an enhancement mode compound semiconductor field effect transistor and a biased transistor formed of an enhancement mode compound semiconductor field effect transistor.
申请公布号 US5486787(A) 申请公布日期 1996.01.23
申请号 US19940179048 申请日期 1994.01.07
申请人 SONY CORPORATION 发明人 MAEKAWA, ITARU;OHGIHARA, TAKAHIRO;TANAKA, KUNINOBU
分类号 H03D7/12;H03F1/30;H03F3/193;H03F3/21;(IPC1-7):H03F1/00;H02J1/00 主分类号 H03D7/12
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