| 摘要 |
The contact image sensor is equipped with photo-conductive photo sensor and driving circuit so that structures of an amplifying stage and an external driver stage become simple. The contact image sensor comprises photo conductive sensors(S1-Sn) comprising a substrate(1), a lower electrode(2), a amorphous silicon layer(3), and a first conduction type amorphous silicon layers(5,6), and thin film transistors(T1-Tn) controlled by output signals of the block selection terminals(B1-Bn) and pixel selection terminals(P1-Pm).
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