发明名称 |
Method for making a high capacitance multi-level storage node for high density TFT load SRAMS with low soft error rates |
摘要 |
A method for making high capacitance multi-level storage node contact is proposed for high density SRAMs. The proposed contact connects several poly levels to diffusion and to a trench capacitor, in one contact. The high storage node capacitance provided by the trench capacitor substantially reduces the soft error rate probability of the cell. The use of a single contact to connect several levels reduces the area. The contact preferably uses TiN as a barrier layer to reduce dopant diffusion between different poly layers.
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申请公布号 |
US5489544(A) |
申请公布日期 |
1996.02.06 |
申请号 |
US19950386845 |
申请日期 |
1995.02.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RAJEEVAKUMAR, THEKKEMADATHIL V. |
分类号 |
H01L21/8244;H01L27/10;H01L27/11;H01L29/786;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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