| 摘要 |
The semiconductor device is mfd. by (a) growing a field oxide film(2) for a device isolation on the silicon substrate(1), (b) depositing a gate oxide film(3) by the etching method, and forming a gate electrode(4), (c) forming an active region(6) by the annealing, and depositing an insulating film(7), (d) forming a contact hole(8) by the selective etching on the active region, and (e) depositing a silicon on the contact region, impregnating an impurity ion, heat treating it, and depositing a metal layer(9) by the sputtering method to form a selective silicon layer(10). The mfg. method prevents a junction spiking and decreases a contact resistance.
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