Semiconductor static random access memory device having previously equalizable memory cells

摘要

A semiconductor static random access memory device has a bi-stable memory cell for storing a data bit in the form of potential difference between two memory nodes, and an equalizing transistor is connected between the two memory nodes for equalizing the two memory nodes at a balance level between a high level and a low level before rewriting the data bit, thereby causing the bi-stable memory cell to swing the voltage levels at the two memory nodes by a half of the potential difference.