SOLID STATE IMAGE PICK-UP DEVICE AND THE MANUFACTURING METHOD THEREOF

摘要

The CCD type solid state image pick-up element comprises; an impurity layer of second conduction type formed on a predetermined portion of a silicon substrate(40) of first conduction type; a gate dielectric layer(42) formed on the silicon substrate; first electrodes(50) formed on the gate dielectric layer formed between impurity layers of second conduction type; second electrodes(60) formed on the gate dielectric layer formed on the impurity layer of second conduction type and folded with a portion of the first electrodes; a first insulation layer(44) of regular thickness formed between the first electrode and second electrode; a thin oxide film(45) deposited on entire surface of the first electrodes and the second electrodes; and a second insulation oxide layer(46) formed on the thin oxide film.