发明名称 |
METHOD OF FABRICATING ELECTRONIC CIRCUIT |
摘要 |
A method of fabricating an electronic circuit by applying polyorganosilane to at least one side of a substrate on which the electronic circuit is to be formed, drying the coating to form a solid polysilane thin film, masking part of the polysilane thin film where the electronic circuit is to be formed, and oxidizing the other part of the thin film to form an insulating part, and doping the masked part with an oxidizing material to form a conductive part. To oxidizing the part of the thin film, the part is irradiated with ultraviolet rays under the presence of oxygen, and the oxidization is preferably controlled. Thus, three or more parts having different volume resistivities are formed.
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申请公布号 |
WO9608127(A1) |
申请公布日期 |
1996.03.14 |
申请号 |
WO1995JP00752 |
申请日期 |
1995.04.18 |
申请人 |
TOSHIBA SILICONE CO., LTD.;IMAI, TAKAFUMI;KABETA, KEIJI;SYUTO, KIYOAKI;WAKAMATSU, SHIGERU |
发明人 |
IMAI, TAKAFUMI;KABETA, KEIJI;SYUTO, KIYOAKI;WAKAMATSU, SHIGERU |
分类号 |
C09D183/16;H01L21/48;H05K3/10;(IPC1-7):H05K3/02;C08G77/60;H01L23/12 |
主分类号 |
C09D183/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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