FAULT-PROTECTED OVERVOLTAGE SWITCH WITH EXPANDED SIGNAL RANGE

摘要

An integrated-circuit chip formed with a fault-protected switch comprising three MOS transistors (24, 22 and 20) in series. An additional MOS transistor (P2) is formed adjacent the center one of the three transistors, and is arranged such that the gates of the two transistors are connected together, the source electrodes of the two transistors are connected together, the backgates form a common region, and the drain of the additional transistor is connected to those backgates.