发明名称 |
Non-volatile semiconductor memory device and manufacturing method thereof |
摘要 |
A tunnel insulating film is formed on a main surface of a silicon substrate. A floating gate electrode is formed on the tunnel insulating film. A nitride layer formed of a material of the floating gate electrode is formed in the vicinity of an interface between the floating gate electrode and the tunnel insulating film located in a tunnel region A. Therefore, the write/erase characteristics of a non-volatile semiconductor memory device can be improved without decreasing the driving capability of a memory transistor at lower voltages.
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申请公布号 |
US5500816(A) |
申请公布日期 |
1996.03.19 |
申请号 |
US19940203074 |
申请日期 |
1994.02.28 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOBAYASHI, KIYOTERU |
分类号 |
G11C17/00;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/04 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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