发明名称 |
Methods for compound semiconductor crystal growth from solution |
摘要 |
A crystal solution growth method for growing a crystal by providing a temperature difference between the higher and lower regions of a solvent, and disposing a source crystal at a high temperature region of the solution and a seed crystal at a low temperature region of the solution. The crystal solution growth method includes the steps of: placing the seed crystal on a recess of a heat sink, the heat sink being disposed under the solvent and the recess being defined on the top surface of the heat sink; placing a seed stopper on the seed crystal to fix the seed crystal, the seed stopper having a tubular part with an inner diameter generally same as the seed crystal and a seed crystal fixing part for fixing the seed crystal formed at one end of, the tubular part on the seed crystal side; and forming a temperature difference between the higher and lower regions of the solvent and growing a crystal oil the surface of the seed crystal.
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申请公布号 |
US5499600(A) |
申请公布日期 |
1996.03.19 |
申请号 |
US19940358864 |
申请日期 |
1994.12.19 |
申请人 |
STANLEY ELECTRIC CO., LTD.;KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY |
发明人 |
OKUNO, YASUO;TOMITA, SHOTARO;KATO, HIROYUKI |
分类号 |
C30B11/00;(IPC1-7):C30B28/04 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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