SEMICONDUCTOR DEVICE HAVING BURIED LAYER AND THE MANUFACTURING METHOD THEREOF

摘要

an impurity buried region of a second conduction type formed on a semiconductor substrate of a first conduction type; a well region of a second conduction type which has density lower than that of impurity of the buried region and which is formed on the buried region; a field oxide film consisting of an opened part exposing the predetermined part of the impurity buried region and formed on the predetermined part of the top well region; a metal electrode which is contacted with conducting pad and extending part of a conducting pad formed by extending to the peripheral part of the opened part.