| 摘要 |
(i) forming a field oxide film(22), a gate oxide film(23c), gate electrodes(23a,23b), a spacer insulation film(32) and source/drain region(24), and forming a first contact hole exposing the predetermined portion of the source/drain region(24) and the gate electrode(23) by selective etching of a formed first insulation film(25); (ii) forming a doped polysilicon film(26) on entire surface of resulting structure, patterning it, and forming a second insulation film(27) and a third insulation film(28) on entire surface of resulting structure in turn; (iii) forming a second contact hole exposing the predetermined portion of the polysilicon film(26) by etching the third insulation film(28) and the second insulation film(27); (iv) forming an impurity diffusion protection film(29) on side wall of the second contact hole; and filling the second contact hole with intrinsic polysilicon(30), and forming a metal wiring over the entire surface.
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