| 摘要 |
FIELD: microelectronic equipment for low currents and voltages where switch-over operations should be made within short time at 10-150 C. SUBSTANCE: silver chalcogenide is doped with germanium selenide and arsenide selenide, and silver selenide is used as silver chalcogenide according to empirical formula (AgSe)(GeSe)(AsSr), where 0,1 ≅ x ≅ 0,5. EFFECT: reduction of electrical resistance relaxation time to 11-60 s, increase in electrical resistance to 10-10ohm-m. 1 dwg, 2 tbl |
