发明名称 Method of forming metal layers formed as a composite of sub-layers using Ti texture control layer
摘要 In an integrated circuit, an opening (e.g., via or window) is filled with an Al-based plug which has essentially a <111> orientation and comprises at most three grains. These characteristics are achieved by first depositing a texture control Ti layer having substantially a (002) basal plane orientation followed by at least three Al-based sublayers. The grain sizes and deposition conditions are controlled in such a way that during deposition of the third sublayer, the microstructure of the plug adjusts itself to produce a single grain (or at most three).
申请公布号 US5523259(A) 申请公布日期 1996.06.04
申请号 US19940349649 申请日期 1994.12.05
申请人 AT&T CORP. 发明人 MERCHANT, SAILESH M.;NANDA, ARUN K.;ROY, PRADIP K.
分类号 H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L21/28 主分类号 H01L21/28
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