发明名称 Substrates and methods for gas phase deposition
摘要 <p>A novel substrate for growth of material by chemical phase deposition includes a temperature monitoring zone formed by applying a coating of growth preventing material (e.g., SiOx or SiNx) to a portion of the substrate. The temperature of the substrate can be monitored during growth of a desired material using an optical pyrometer having its field of view directed at the temperature monitoring zone.</p>
申请公布号 EP0715006(A1) 申请公布日期 1996.06.05
申请号 EP19950308343 申请日期 1995.11.21
申请人 AT&T CORP. 发明人 CHIU, TIEN-HENG
分类号 G01J5/00;C30B25/10;C30B25/18;H01L21/203;H01L21/205;H01L21/66;(IPC1-7):C30B25/02;H01L21/20;C23C16/52 主分类号 G01J5/00
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