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发明名称 NOVEL TRANSISTOR WITH ULTRA SHALLOW TIP AND METHOD OF FABRICATION
摘要 A novel transistor (200) with a low resistance ultra shallow tip region (214) and its method of fabrication. The novel transistor of the present invention has a source/drain extension or tip region (210) comprising an ultra shallow region (214) which extends beneath the gate electrode and a raised region (216).
申请公布号 WO9620499(A1) 申请公布日期 1996.07.04
申请号 WO1995US16760 申请日期 1995.12.21
申请人 INTEL CORPORATION 发明人 CHAU, ROBERT, S.;CHERN, CHAN-HONG;JAN, CHIA-HONG;WELDON, KEVIN, R.;PACKAN, PAUL, A.;YAU, LEOPOLDO, D.
分类号 H01L21/225;H01L21/28;H01L21/336;H01L21/8238;H01L29/08;H01L29/417;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L21/44;H01L21/265;H01L21/465;H01L29/04;H01L29/06;H01L29/76 主分类号 H01L21/225
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