| 发明名称 |
Fabrication process for mitigating external resistance of a multigate device |
| 摘要 |
A method for fabricating a multigate device includes forming a fin on a substrate of the multigate device, the fin being formed of a semiconductor material, growing a first conformal epitaxial layer directly on the fin and substrate, wherein the first conformal epitaxial layer is highly doped, growing a second conformal epitaxial layer directly on the first conformal epitaxial layer, wherein the second conformal epitaxial layer is highly doped, selectively removing a portion of second epitaxial layer to expose a portion of the first conformal epitaxial layer, selectively removing a portion of the first conformal epitaxial layer to expose a portion of the fin and thereby form a trench, and forming a gate within the trench. |
| 申请公布号 |
US9484463(B2) |
申请公布日期 |
2016.11.01 |
| 申请号 |
US201414197655 |
申请日期 |
2014.03.05 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Basu Anirban;Cohen Guy;Majumdar Amlan |
| 分类号 |
H01L29/78;H01L29/205;H01L29/66;H01L29/201;H01L29/778 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
Percello Louis |
| 主权项 |
1. A method for fabricating a multigate device, the method comprising:
forming a fin on a substrate of the multigate device, the fin comprising a semiconductor material; growing a first conformal epitaxial layer directly on the fin and substrate, wherein the first conformal epitaxial layer is highly doped; growing a second conformal epitaxial layer directly on the first conformal epitaxial layer, wherein the second conformal epitaxial layer is highly doped; selectively removing a portion of second epitaxial layer to expose a portion of the first conformal epitaxial layer; selectively removing a portion of the first conformal epitaxial layer to expose a portion of the fin and thereby form a trench; and forming a gate within the trench. |
| 地址 |
Armonk NY US |
