Semiconductor device including first and second trenches having substantially equal depths

摘要

A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates.

主权项

1. A semiconductor device, comprising:
a substrate having a first region and a second region defined therein; a plurality of first gates spaced apart from each other at a first pitch in the first region; a plurality of second gates spaced apart from each other at a second pitch different from the first pitch in the second region; active patterns protruded from the substrate, each of the active patterns extending in a first direction; a space between adjacent active patterns; at least one of the plurality of first gates and at least one of the plurality of second gates extending on at least two active patterns in a second direction, the second direction being perpendicular to the first direction; a first trench in the first region between the plurality of first gates; a second trench in the second region between the plurality of second gates; a first epitaxial layer in at least a portion of the first trench; and a second epitaxial layer in at least a portion of the second trench, wherein the first trench and the second trench have substantially equal depths, and wherein the first trench and the second trench have substantially hexagonal profiles or sigma shapes.