Array substrate of X-ray sensor and method for manufacturing the same

摘要

An array substrate of an X-ray sensor and a method for manufacturing the same are provided, the method comprising a step of forming a thin-film transistor element and a photodiode sensor element, wherein the step of forming the thin-film transistor element comprises: forming a gate electrode (1001) on an base substrate (1000) by a mask process; depositing a gate insulating layer (1005) on the base substrate (1000) on which the gate electrode (1001) is formed; the step of forming the photodiode sensor element comprises: forming an ohmic contact layer (1002) on the base substrate (1000) through the same mask process while forming the gate electrode (1001); forming a semiconductor layer (1003) and a transparent electrode (1004) through a mask process on the substrate (1000) on which the ohmic contact layer (1002) is formed; depositing the gate insulating layer on the base substrate on which the semiconductor layer (1003) and the transparent electrode (1004) are formed while depositing the gate insulating layer (1005) on the base substrate (1000) on which the gate electrode (1001) is formed. A gate pattern and an ohmic contact layer are formed through the same mask process, and a passivation layer substitutes a channel blocking layer to reduce the number of the mask processes and simplify the manufacturing process and improve throughput and yield of the product.

主权项

1. An array substrate of an X-ray sensor, comprising a thin-film transistor element and a photodiode sensor element connected to the thin-film transistor element, wherein the thin-film transistor element comprises:
a gate electrode on an base substrate; a gate insulating layer above the gate electrode; the photodiode sensor element comprises: an ohmic contact layer on the base substrate; a semiconductor layer and a transparent electrode on the ohmic contact layer; and the gate insulating layer on the semiconductor layer and the transparent electrode, wherein the ohmic contact layer and the gate electrode are formed in a same layer by a same mask process.