| 发明名称 | Semiconductor device having an inter-layer via (ILV), and method of making same | ||
| 摘要 | A three dimensional semiconductor device includes a first memory device, a second memory device and a via. The via connects the first memory device to the second memory device. | ||
| 申请公布号 | US9484350(B2) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201314039481 | 申请日期 | 2013.09.27 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Huang Tsung-Hsien;Cheng Hong-Chen;Lee Cheng-Hung;Liao Hung-Jen |
| 分类号 | H01L29/76;H01L27/112;G11C7/18;H01L23/522;H01L27/06 | 主分类号 | H01L29/76 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A three dimensional semiconductor device comprising: a first memory device; a bit line connected to the first memory device; a first drain via connected to the bit line and the first memory device; a second memory device; and a first via, wherein the first via connects a first source via of the first memory device to a second source via of the second memory device. | ||
| 地址 | TW | ||