Resistive memory element

摘要

PCT No. PCT/GB92/01929 Sec. 371 Date Sep. 19, 1994 Sec. 102(e) Date Sep. 19, 1994 PCT Filed Oct. 20, 1992 PCT Pub. No. WO93/08575 PCT Pub. Date Apr. 29, 1993The resistance of a resistive memory element, e.g. a synaptic element is programmed, e.g. adjusted to a target value, by pulses of a constant height and variable width. One polarity gives an increase in resistance; the other polarity gives a decrease. A short pulse applied after a longer pulse appears to have no effect. After each polarity change short pulses can again be used to make small adjustments. In a preferred embodiment longer and longer pulses are used until the resistance overshoots the target value. After overshooting the polarity is reversed and a second series of pulses is used to obtain a closer approach to the target. The resistive element comprises a resistive layer located between two electrodes, e.g. a matrix of amorphous silicon doped with boron containing V. One electrode is Cr and the other is V.