FORMATION OF SHALLOW-JUNCTION USING TITANIUM SILICIDE

摘要

An upper region of silicon substrate consists of a field oxide film, a gate oxide film, a gate electrode, and a spacer oxide film. The method comprises the steps of: using a multiple crystallization(6) as a diffusion source to form a shallow junction, evaporating titanium on the polysilicon(6), etching a silicide in hydrogen fluoride fluid after the reaction of multiple crystallization(6) and titanium(9).